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MGW12N120D spec: Insulated gate bipolar transistor with anti-parallel diode
Ähnliche MGW12N120D
- MGW12N120
- Insulated gate bipolar transistor
- MGW12N120D
- Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D Datenblatt und Spezifikationen
Hersteller : Motorola
Verpacken : TO-247AE
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 274 KB
Application : Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D PDF-Download