Ähnliche MTB50N06EL

  • MTB50N06EL
    • TMOS E-FET power field effect transistor D2PAK for surface mount
  • MTB50N06V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTB50N06V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTB50N06VL
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTB52N06V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTB52N06V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTB52N06VL
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTB55N06Z
    • TMOS E-FET high energy power FET D2PAK for surface mount

MTB50N06EL Datenblatt und Spezifikationen

Hersteller : Motorola 

Verpacken : DPAK 

Pins : 4 

Temperatur : Min -55 °C | Max 150 °C

Größe : 106 KB

Application : TMOS E-FET power field effect transistor D2PAK for surface mount 

MTB50N06EL PDF-Download