Path:OKDatasheet > Halbleiter Datenblatt > Motorola Datenblatt > MTD1N50E
MTD1N50E spec: TMOS E-FET power field effect transistor D2PAK for surface mount
Ähnliche MTD1N50E
- MTD1302
- HDTMOS E-FET high dansity power FET D2PAK for surface mount
- MTD15N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD15N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTD1N50E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N60E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N80E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N80E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1P50E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTD1N50E Datenblatt und Spezifikationen
Hersteller : Motorola
Verpacken : DPAK
Pins : 4
Temperatur : Min -55 °C | Max 150 °C
Größe : 293 KB
Application : TMOS E-FET power field effect transistor D2PAK for surface mount
MTD1N50E PDF-Download