Path:OKDatasheet > Halbleiter Datenblatt > Motorola Datenblatt > MTD3055VL
MTD3055VL spec: TMOS V power field effect transistor D2PAK for surface mount
Ähnliche MTD3055VL
- MTD3055EL
- N-channel enhancement-mode silicon gate, 10A, 80V
- MTD3055EL1
- N-channel enhancement-mode silicon gate, 10A, 80V
- MTD3055V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3055V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3055VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3302
- HDTMOS single N-channel field effect transistor
MTD3055VL Datenblatt und Spezifikationen
Hersteller : Motorola
Verpacken : DPAK
Pins : 4
Temperatur : Min -55 °C | Max 175 °C
Größe : 229 KB
Application : TMOS V power field effect transistor D2PAK for surface mount
MTD3055VL PDF-Download