Path:OKDatasheet > Halbleiter Datenblatt > NEC Datenblatt > NE4210S01-T1
NE4210S01-T1 spec: GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
Ähnliche NE4210S01-T1
- NE4210M01-T1
- N-channel HJ-FET
- NE4210M01-T2
- N-channel HJ-FET
- NE4210M01-T2
- N-channel HJ-FET
- NE4210S01-T1
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE4210S01-T1B
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE425S01-T1
- N-channel HJ-FET
- NE429M01
- N-channel HJ-FET
- NE429M01-T1
- N-channel HJ-FET
NE4210S01-T1 Datenblatt und Spezifikationen
Hersteller : NEC
Verpacken : 4-pin u-x type mold
Pins : 0
Temperatur : Min 0 °C | Max 0 °C
Größe : 71 KB
Application : GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1 PDF-Download