Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE2102
NTE2102 spec: Integrated circuit. NMOS, 1K static RAM (SRAM), 35ns.
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NTE2102 Datenblatt und Spezifikationen
Hersteller : NTE Electronic
Verpacken : DIP
Pins : 16
Temperatur : Min 0 °C | Max 70 °C
Größe : 30 KB
Application : Integrated circuit. NMOS, 1K static RAM (SRAM), 35ns.
NTE2102 PDF-Download