Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE213
NTE213 spec: Germanium PNP transistor. High power, high gain amplifier.
Ähnliche NTE213
- NTE2003
- Integrated circuit. Dolby B-type noise reduction processor.
- NTE2011
- Integrated circuit. 7-channel darlington array/driver.
- NTE2012
- Integrated circuit. 7-channel darlington array/driver.
- NTE2013
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2015
- Integrated circuit. 7-channel darlington array/driver.
- NTE2016
- Integrated circuit. 8-channel darlington array/driver.
NTE213 Datenblatt und Spezifikationen
Hersteller : NTE Electronic
Verpacken : TO36
Pins : 2
Temperatur : Min -65 °C | Max 110 °C
Größe : 25 KB
Application : Germanium PNP transistor. High power, high gain amplifier.
NTE213 PDF-Download