Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE291
NTE291 spec: Silicon complementary NPN transistor. Medium power amp, switch.
Ähnliche NTE291
- NTE2003
- Integrated circuit. Dolby B-type noise reduction processor.
- NTE2011
- Integrated circuit. 7-channel darlington array/driver.
- NTE2012
- Integrated circuit. 7-channel darlington array/driver.
- NTE2013
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2015
- Integrated circuit. 7-channel darlington array/driver.
- NTE2016
- Integrated circuit. 8-channel darlington array/driver.
NTE291 Datenblatt und Spezifikationen
Hersteller : NTE Electronic
Verpacken : TO220
Pins : 3
Temperatur : Min -65 °C | Max 150 °C
Größe : 26 KB
Application : Silicon complementary NPN transistor. Medium power amp, switch.
NTE291 PDF-Download