Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE299
NTE299 spec: Silicon NPN transistor. RF power amp, driver.
Ähnliche NTE299
- NTE2003
- Integrated circuit. Dolby B-type noise reduction processor.
- NTE2011
- Integrated circuit. 7-channel darlington array/driver.
- NTE2012
- Integrated circuit. 7-channel darlington array/driver.
- NTE2013
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2015
- Integrated circuit. 7-channel darlington array/driver.
- NTE2016
- Integrated circuit. 8-channel darlington array/driver.
NTE299 Datenblatt und Spezifikationen
Hersteller : NTE Electronic
Verpacken : TO202
Pins : 3
Temperatur : Min 0 °C | Max 125 °C
Größe : 19 KB
Application : Silicon NPN transistor. RF power amp, driver.
NTE299 PDF-Download