Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE3123
NTE3123 spec: Phototransistor. Silicon NPN, interrmediate acceptance, high sensitivity, darlington.
Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE3123
NTE3123 spec: Phototransistor. Silicon NPN, interrmediate acceptance, high sensitivity, darlington.
Hersteller : NTE Electronic
Verpacken :
Pins : 2
Temperatur : Min -25 °C | Max 85 °C
Größe : 21 KB
Application : Phototransistor. Silicon NPN, interrmediate acceptance, high sensitivity, darlington.