NTE3312 spec: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.

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NTE3312 Datenblatt und Spezifikationen

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Pins : 3

Temperatur : Min 0 °C | Max 150 °C

Größe : 19 KB

Application : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.