Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE5416
NTE5416 spec: Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 600V.
Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE5416
NTE5416 spec: Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 600V.
Hersteller : NTE Electronic
Verpacken : TO126
Pins : 3
Temperatur : Min -40 °C | Max 110 °C
Größe : 23 KB
Application : Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 600V.