Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE5576
NTE5576 spec: Silicon controlled rectiifier. Repetitive peak voltage, Vdrm,Vrrm = 600V. RMS on-state current Itrms = 175A.
Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE5576
NTE5576 spec: Silicon controlled rectiifier. Repetitive peak voltage, Vdrm,Vrrm = 600V. RMS on-state current Itrms = 175A.
Hersteller : NTE Electronic
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Pins : 4
Temperatur : Min -40 °C | Max 125 °C
Größe : 23 KB
Application : Silicon controlled rectiifier. Repetitive peak voltage, Vdrm,Vrrm = 600V. RMS on-state current Itrms = 175A.