Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE5655
NTE5655 spec: TRIAC, 800mA, sensitive gate. Repetitive peak off-state voltage Vdrm = 200V. RMS on-state current 800mA.
Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE5655
NTE5655 spec: TRIAC, 800mA, sensitive gate. Repetitive peak off-state voltage Vdrm = 200V. RMS on-state current 800mA.
Hersteller : NTE Electronic
Verpacken : TO92
Pins : 3
Temperatur : Min -40 °C | Max 100 °C
Größe : 20 KB
Application : TRIAC, 800mA, sensitive gate. Repetitive peak off-state voltage Vdrm = 200V. RMS on-state current 800mA.