Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE581
NTE581 spec: General purpose silicon rectifier. Fast recovery. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max average forward rectified current 8A.
Ähnliche NTE581
- NTE5198A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 24V. Zener test current Izt = 105mA."
- NTE5183A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 8.2V. Zener test current Izt = 305mA."
- NTE5945
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 15A.
- NTE5227A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 160V. Zener test current Izt = 16mA."
- NTE5914
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 20A.
- NTE5045A
- "Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 68V, Zener test current Izt = 1.8mA."
- NTE5322W
- "Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 200V."
- NTE5001A
- "Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 2.5V, Zener test current Izt = 20mA."
NTE581 Datenblatt und Spezifikationen
Hersteller : NTE Electronic
Verpacken :
Pins : 2
Temperatur : Min -65 °C | Max 175 °C
Größe : 18 KB
Application : General purpose silicon rectifier. Fast recovery. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max average forward rectified current 8A.
NTE581 PDF-Download