Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE587
NTE587 spec: Silicon diode, ultra fast switch. Max reccurent peak reverse voltage 200V. Max average forward rectified current 1.0A.
Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE587
NTE587 spec: Silicon diode, ultra fast switch. Max reccurent peak reverse voltage 200V. Max average forward rectified current 1.0A.
Hersteller : NTE Electronic
Verpacken : DO41
Pins : 2
Temperatur : Min -65 °C | Max 150 °C
Größe : 16 KB
Application : Silicon diode, ultra fast switch. Max reccurent peak reverse voltage 200V. Max average forward rectified current 1.0A.