Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE5875
NTE5875 spec: Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE5875
NTE5875 spec: Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
Hersteller : NTE Electronic
Verpacken : DO4
Pins : 2
Temperatur : Min -65 °C | Max 175 °C
Größe : 26 KB
Application : Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.