Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE5888
NTE5888 spec: Silicon power rectifier diode. Cathode to case. Peak reverse voltage 1200V. Max forward current 30A.
Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE5888
NTE5888 spec: Silicon power rectifier diode. Cathode to case. Peak reverse voltage 1200V. Max forward current 30A.
Hersteller : NTE Electronic
Verpacken : DO4
Pins : 2
Temperatur : Min -40 °C | Max 175 °C
Größe : 16 KB
Application : Silicon power rectifier diode. Cathode to case. Peak reverse voltage 1200V. Max forward current 30A.