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NTE5999 spec: Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A.
Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE5999
NTE5999 spec: Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A.
Hersteller : NTE Electronic
Verpacken :
Pins : 2
Temperatur : Min -65 °C | Max 175 °C
Größe : 28 KB
Application : Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A.