Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE6013
NTE6013 spec: Silicon industrial recfifier. Max peak repetitive reverse voltage 600V. Max RMS forward current 20A.
Ähnliche NTE6013
- NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
- NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
- NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
- NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE6013 Datenblatt und Spezifikationen
Hersteller : NTE Electronic
Verpacken : TO220
Pins : 3
Temperatur : Min -40 °C | Max 125 °C
Größe : 20 KB
Application : Silicon industrial recfifier. Max peak repetitive reverse voltage 600V. Max RMS forward current 20A.
NTE6013 PDF-Download