Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE619
NTE619 spec: Silicon rectifier, ultra fast. Peak repetitive reverse voltage 600V. Average rectified forward current 5A.
Ähnliche NTE619
- NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
- NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
- NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
- NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE619 Datenblatt und Spezifikationen
Hersteller : NTE Electronic
Verpacken :
Pins : 2
Temperatur : Min -65 °C | Max 175 °C
Größe : 17 KB
Application : Silicon rectifier, ultra fast. Peak repetitive reverse voltage 600V. Average rectified forward current 5A.
NTE619 PDF-Download