Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE6364
NTE6364 spec: Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1600V.
Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE6364
NTE6364 spec: Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1600V.
Hersteller : NTE Electronic
Verpacken :
Pins : 2
Temperatur : Min -40 °C | Max 180 °C
Größe : 27 KB
Application : Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1600V.