Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE65101
NTE65101 spec: Integrated circuit. 256 x 4 bit static RAM (SRAM).
Ähnliche NTE65101
- NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
- NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
- NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
- NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE65101 Datenblatt und Spezifikationen
Hersteller : NTE Electronic
Verpacken : DIP
Pins : 22
Temperatur : Min -40 °C | Max 85 °C
Größe : 32 KB
Application : Integrated circuit. 256 x 4 bit static RAM (SRAM).
NTE65101 PDF-Download