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MGW12N120D spec: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
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MGW12N120D Datenblatt und Spezifikationen
Hersteller : ON Semiconductor
Verpacken : TO-247
Pins : 3
Temperatur : Min 0 °C | Max 0 °C
Größe : 184 KB
Application : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW12N120D PDF-Download