Path:OKDatasheet > Halbleiter Datenblatt > ON Semiconductor Datenblatt > MGY25N120D
MGY25N120D spec: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
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MGY25N120D Datenblatt und Spezifikationen
Hersteller : ON Semiconductor
Verpacken : TO-3PBL
Pins : 3
Temperatur : Min 0 °C | Max 0 °C
Größe : 188 KB
Application : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY25N120D PDF-Download