Path:OKDatasheet > Halbleiter Datenblatt > ON Semiconductor Datenblatt > MJE18002D2
MJE18002D2 spec: High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
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MJE18002D2 Datenblatt und Spezifikationen
Hersteller : ON Semiconductor
Verpacken : TO-220
Pins : 3
Temperatur : Min 0 °C | Max 0 °C
Größe : 167 KB
Application : High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
MJE18002D2 PDF-Download