Ähnliche 1N5350B

  • 1N5348B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 11V, Izt = 125mA
  • 1N5349B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 12V, Izt = 100mA
  • 1N5350B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 13V, Izt = 100mA
  • 1N5351B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
  • 1N5351B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
  • 1N5352B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 15V, Izt = 75mA
  • 1N5354B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 17V, Izt = 70mA
  • 1N5355B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA

1N5350B Datenblatt und Spezifikationen

Hersteller : PanJit 

Verpacken : DO-201AE 

Pins : 2 

Temperatur : Min -55 °C | Max 150 °C

Größe : 336 KB

Application : Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 13V, Izt = 100mA 

1N5350B PDF-Download