3EZ200 spec: Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 200 V. Izt = 3.7 mA.

Ähnliche 3EZ200

3EZ20
- Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 20 V. Izt = 37 mA.
3EZ200
- Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 200 V. Izt = 3.7 mA.
3EZ22
- Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 22 V. Izt = 34 mA.
3EZ24
- Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 24 V. Izt = 31 mA.
3EZ27
- Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 27 V. Izt = 28 mA.
3EZ28
- Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 28 V. Izt = 27 mA.

3EZ200 Datenblatt und Spezifikationen

Hersteller : PanJit

Verpacken : D0-15

Pins : 2

Temperatur : Min -55 °C | Max 150 °C

Größe : 507 KB

Application : Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 200 V. Izt = 3.7 mA.