| Teil no | Hersteller | Application |
|---|
| P6SMBJ110A | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V. It = 1.0 mA. Ir = 5 uA. Vc = 177 V. Ipp = 3.4 A. |
| MMBZ5221BW | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 2.4 V @ Izt. 200 mWatts zener diode. |
| MMBZ5242BW | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 12 V @ Izt. 200 mWatts zener diode. |
| 15KP210 | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A. |
| P4KE7.5C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 6.05V, Vbr(min/max) = 6.75/8.25V, It = 10 mA. |
| P6KE9.1A | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 7.78V, Vbr(min/max) = 8.65/9.50V, It = 1 mA. |
| 3.0SMCJ120CA | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 120 V. Vbr(min/max) = 133/153.0.0V @ It. Ir = 5 uA @ Vrwm. Vc = 193 V @ Ipp = 15.6 A. |
| 3KP28 | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 28.00 V. Vbr = 31.10 V (min), 39.40 V (max). It = 1 mA. |
| SA20 | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 20.00V, Vbr(min/max) = 22.20/28.10V, It = 1 mA. |
| 1SMB2EZ12 | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 12.0 V. Test current Izt = 41.5 mA |
| GBPC1502W | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current for resistive load at Tc=55degC 15 A. |
| 1.5SMCJ40C | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 40V; Vbr(min/max) = 44.4/56.3V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 71.4V, @ Ipp = 21.0A |
| MMSZ5257BS | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 33 V @ Izt. 200 mWatts zener diode. |
| SD860S | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 85degC 8.0 A. |
| 3.0SMCJ54C | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 54 V. Vbr(min/max) = 60.0/76.0 V @ It. Ir = 5 uA @ Vrwm. Vc = 96.3 V @ Ipp = 31.2 A. |
| 3.0SMCJ43 | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 43 V. Vbr(max/min) = 47.8/60.5 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 76.7 V @ Ipp = 39.2 A. |
| 1A2G | PanJit | Miniature glass passivated junction plastic rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.0 A. |
| SR26 | PanJit | Mini surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current 2.0 A. |
| 1S10 | PanJit | 1 Ampere schottky barrier rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 1.0 A. |
| MMBZ5228B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 3.9 V @ Izt. 500 mWatts zener diode. |
| ER1B | PanJit | Surface mount superfast rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified current 1.0A. |
| PS158 | PanJit | Plastic silicon rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 9.5mm lead length at Ta = 60degC 1.5 A. |
| TSP075A | PanJit | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 75V. Breakover voltage 98V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
| P6SMBJ70C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 70 V. Vbr(min/max) = 77.8/98.6 V. It = 1.0 mA. Ir = 5 uA. Vc = 125 V. Ipp = 4.8 A. |
| BZT52-C33S | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 33 V |
| SB3050CT | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 50.0 V. Max average forward rectified current at Tc = 90degC 30 A. |
| GBU6A | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified output current at Tc=100degC 6.0 A. |
| 1N5366B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 39V, Izt = 30mA |
| 15KP58C | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 58 V. Vbr(min/max) = 64.4/81.6 V @ It = 5.0 mA. Ir = 10 uA. Vc = 103 V @ Ipp = 144 A. |
| SB340 | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at 75degC 3.0 A. |
