Path:okDatasheet > Halbleiter Datenblatt > PanJit Datenblatt > PanJit-33
N5933B PG5406 P6KE30C 3.0SMCJ110A P6KE130 ER1002CT 3.0SMCJ16CA CP1502 P4KE170C GBU8K 3EZ39 1N5351B P4SMAJ58C CM15010W 3.0SMCJ13 SA8.0 MMBZ5248BW P6SMBJ100 1SMC5351 SA6.0C P4KE100CA P4SMAJ18C P6SMBJ7.0CA CM1501 UF204 CP3504 1SMB3EZ14 P6SMBJ43CA
Teil no | Hersteller | Application |
---|---|---|
ER1003FCT | PanJit | Isolation superfast recovery rectifier. Max recurrent peak reverse voltage 300V. Max average forward rectified current (Tc=100degC) 10.0A. |
SB3060CT | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 60.0 V. Max average forward rectified current at Tc = 90degC 30 A. |
1N5933B | PanJit | Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 22V. Test current Izt = 17 mA. |
PG5406 | PanJit | Glass passivated junction plastic rectifier. Max recurrent peak reverse voltage 600 A. Max average forward rectified current 0.375inches lead length at Ta = 55degC 3.0 A.. |
P6KE30C | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 24.30V, Vbr(min/max) = 27.00/33.00V, It = 1 mA. |
3.0SMCJ110A | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It. Ir = 5 uA @ Vrwm. Vc = 177 V @ Ipp = 16.8 A. |
P6KE130 | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 105.20V, Vbr(min/max) = 117.00/143.00V, It = 1 mA. |
ER1002CT | PanJit | Superfast recovery rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified current (Tc=100degC) 10.0A. |
3.0SMCJ16CA | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 16 V. Vbr(max/min) = 17.8/20.5 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 26.0 V @ Ipp = 115.4 A. |
CP1502 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load at Tc=55degC 15A. |
P4KE170C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 138.00V, Vbr(min/max) = 153.00/187.00V, It = 1 mA. |
GBU8K | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified output current at Tc=100degC 8.0 A, at Ta=40degC 6.0 A. |
3EZ39 | PanJit | Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 39 V. Izt = 19 mA. |
1N5351B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA |
P4SMAJ58C | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 58 V. Breakdown voltage(min/max) 64.4/81.6 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 103 V. Peak pulse current 3.9 A. |
CM15010W | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 1000V. Max average forward current 15.0A |
3.0SMCJ13 | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 13 V. Vbr(max/min) = 14.4/18.2 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 23.8 V @ Ipp = 126.0 A. |
SA8.0 | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 8.00V, Vbr(min/max) = 8.89/11.30V, It = 1 mA. |
MMBZ5248BW | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 18 V @ Izt. 200 mWatts zener diode. |
P6SMBJ100 | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V. It = 1.0 mA. Ir = 5 uA. Vc = 179 V. Ipp = 3.4 A. |
1SMC5351 | PanJit | Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 14 V. Test current Izt = 100 mA. |
SA6.0C | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 6.00V, Vbr(min/max) = 6.67/8.45V, It = 10 mA. |
P4KE100CA | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 85.50V, Vbr(min/max) = 95.00/105.00V, It = 1 mA. |
P4SMAJ18C | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 18 V. Breakdown voltage(min/max) 20.0/25.3 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 32.2 V. Peak pulse current 12.4 A. |
P6SMBJ7.0CA | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 7.0 V. Vbr(min/max) = 7.78/8.95 V. It = 10 mA. Ir = 400 uA. Vc = 12.0 V. Ipp = 50.0 A. |
CM1501 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load 15A. Non-repetive peak forward surge current at rated load 300A. |
UF204 | PanJit | Ultrafast switching rectifier. Peak reverse voltage 400 V. Average forward current 2.0 A. |
CP3504 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward current for resistive load at Tc=55degC 35A. |
1SMB3EZ14 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 14 V. Test current Izt = 53 mA |
P6SMBJ43CA | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 43 V. Vbr(min/max) = 47.8/54.9 V. It = 1.0 mA. Ir = 5 uA. Vc = 69.4 V. Ipp = 8.6 A. |