Path:okDatasheet > Halbleiter Datenblatt > PanJit Datenblatt > PanJit-43
ED506S MMSZ5250B P4SMAJ210C P6SMBJ30A 1N5406 P4KE11CA P6SMBJ24C P6SMBJ48C 3KP9.0A P4SMAJ18 1N5367B P4KE7.5 TSP120B SA14C P6KE6.8A PG301R TSP120B BZT52-C11S BZT52-C9V1S 2EZ110 1N5379B GBP200 1.5SMCJ78CA 3KP51A P4SMAJ90 SA17CA 15KP180CA
Teil no | Hersteller | Application |
---|---|---|
BAT54AW | PanJit | Surface mount schottky barrier diode. Max recurrent peak reverse voltage 30 V. Max average forward current 0.2 A. |
PG156R | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 600 A. Average forward current. IO at 55degC, 3.8inches lead length 60 Hz, resistive or inductive load 1.5 A. |
SA48C | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 48.00V, Vbr(min/max) = 53.30/67.50V, It = 1 mA. |
ED506S | PanJit | DPAK surfase mount super fast recovery rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified current (Tc=75degC) 5.0A. |
MMSZ5250B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 20 V @ Izt. 500 mWatts zener diode. |
P4SMAJ210C | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 210 V. Breakdown voltage(min/max) 231/296.1 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 376 V. Peak pulse current 1.1 A. |
P6SMBJ30A | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 30 V. Vbr(min/max) = 33.3/38.3 V. It = 1.0 mA. Ir = 5 uA. Vc = 48.4 V. Ipp = 12.4 A. |
1N5406 | PanJit | High current plastic silicon rectifier. Max reccurent peak reverse voltage 600V. Max average forward rectified current 3.0A. |
P4KE11CA | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 9.40V, Vbr(min/max) = 10.50/11.60V, It = 1 mA. |
P6SMBJ24C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 24 V. Vbr(min/max) = 26.7/33.8 V. It = 1.0 mA. Ir = 5 uA. Vc = 43.0 V. Ipp = 14.0 A. |
P6SMBJ48C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 48 V. Vbr(min/max) = 53.3/67.5 V. It = 1.0 mA. Ir = 5 uA. Vc = 85.5 V. Ipp = 7.0 A. |
3KP9.0A | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 9.00 V. Vbr = 10.00 V (min), 11.50 V (max). It = 1 mA. |
P4SMAJ18 | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 18 V. Breakdown voltage(min/max) 20.0/25.3 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 32.2 V. Peak pulse current 12.4 A. |
1N5367B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 43V, Izt = 30mA |
P4KE7.5 | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 6.05V, Vbr(min/max) = 6.75/8.25V, It = 10mA. |
TSP120B | PanJit | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 120V. Breakover voltage 160V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
SA14C | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 14.00V, Vbr(min/max) = 15.60/19.80V, It = 1 mA. |
P6KE6.8A | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 5.80V, Vbr(min/max) = 6.45/7.14V, It = 10 mA. |
PG301R | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 100 A. Max average forward rectified current 9.5mm lead lehgth at Ta = 55degC 3.0 A. |
TSP120B | PanJit | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 120V. Breakover voltage 160V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
BZT52-C11S | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 11 V |
BZT52-C9V1S | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 9.1 V |
2EZ110 | PanJit | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 110.0 V. Test current Izt = 4.5 mA. |
1N5379B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 110V, Izt =12mA |
GBP200 | PanJit | In-line glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 50V. Max average rectified output current 2.0A. |
1.5SMCJ78CA | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 78V; Vbr(min/max) = 86.7/99.7V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 126V, @ Ipp = 11.4A |
3KP51A | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 51.00 V. Vbr = 56.70 V (min), 65.20 V (max). It = 1 mA. |
P4SMAJ90 | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 90 V. Breakdown voltage(min/max) 100/126.5 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 160 V. Peak pulse current 2.5 A. |
SA17CA | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 17.00V, Vbr(min/max) = 18.90/21.70V, It = 1 mA. |
15KP180CA | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. |