1N5367B spec: Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 43V, Izt = 30mA

Ähnliche 1N5367B

1N5348B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 11V, Izt = 125mA
1N5349B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 12V, Izt = 100mA
1N5350B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 13V, Izt = 100mA
1N5351B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
1N5351B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
1N5352B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 15V, Izt = 75mA
1N5354B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 17V, Izt = 70mA
1N5355B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA

1N5367B Datenblatt und Spezifikationen

Hersteller : PanJit

Verpacken : DO-201AE

Pins : 2

Temperatur : Min -55 °C | Max 150 °C

Größe : 336 KB

Application : Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 43V, Izt = 30mA