Path:OKDatasheet > Halbleiter Datenblatt > PerkinElmer Datenblatt > VTP8551
VTP8551 spec: Process photodiode. Isc = 70 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.
Ähnliche VTP8551
- VTP8350
- Process photodiode. Isc = 80 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.
- VTP8440
- "Process photodiode. Isc = 55 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K."
- VTP8551
- Process photodiode. Isc = 70 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.
- VTP8651
- Process photodiode. Isc = 55 microA(typ), Voc = 300 mV at H = 100 fc, 2850 K.
VTP8551 Datenblatt und Spezifikationen
Hersteller : PerkinElmer
Verpacken : Mini DIP
Pins : 2
Temperatur : Min -40 °C | Max 85 °C
Größe : 28 KB
Application : Process photodiode. Isc = 70 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.
VTP8551 PDF-Download