Path:OKDatasheet > Halbleiter Datenblatt > Philips Datenblatt > BUK545-100B
BUK545-100B spec: PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 12 A.
Ähnliche BUK545-100B
- BUK542-100A
- 100 V, power MOS transistor
- BUK542-100A
- 100 V, power MOS transistor
- BUK542-100B
- 100 V, power MOS transistor
- BUK542-60A
- 60 V, power MOS transistor
- BUK542-60B
- 60 V, power MOS transistor
- BUK542-60B
- 60 V, power MOS transistor
- BUK543-100A
- PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 8.3 A.
- BUK543-100A
- 100 V, power MOS transistor
BUK545-100B Datenblatt und Spezifikationen
Hersteller : Philips
Verpacken : SOT186
Pins : 3
Temperatur : Min 0 °C | Max 150 °C
Größe : 78 KB
Application : PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 12 A.
BUK545-100B PDF-Download