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BUK555-100B spec: PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm
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BUK555-100B Datenblatt und Spezifikationen
Hersteller : Philips
Verpacken :
Pins : 3
Temperatur : Min -55 °C | Max 175 °C
Größe : 59 KB
Application : PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm
BUK555-100B PDF-Download