Path:OKDatasheet > Halbleiter Datenblatt > Philips Datenblatt > BUK856-800A
BUK856-800A spec: Insulated gate bipolar transistor (IGBT).
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BUK856-800A Datenblatt und Spezifikationen
Hersteller : Philips
Verpacken : TO220AB
Pins : 3
Temperatur : Min 0 °C | Max 150 °C
Größe : 65 KB
Application : Insulated gate bipolar transistor (IGBT).
BUK856-800A PDF-Download