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BUT12AF spec: 1000 V, silicon diffused power transistor
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BUT12AF Datenblatt und Spezifikationen
Hersteller : Philips
Verpacken : SOT
Pins : 3
Temperatur : Min 0 °C | Max 0 °C
Größe : 85 KB
Application : 1000 V, silicon diffused power transistor
BUT12AF PDF-Download