Path:OKDatasheet > Halbleiter Datenblatt > Philips Datenblatt > PHB112N06T
PHB112N06T spec: 55 V, N-channel enhancement mode field-effect transistor
Ähnliche PHB112N06T
- PHB100N03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB10N40
- PowerMOS transistor.
- PHB10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHB112N06T
- 55 V, N-channel enhancement mode field-effect transistor
- PHB11N03LT
- N-channel TrenchMOS(TM) transistor Logic level FET
- PHB11N03LT
- 30 V, N-channel trenchMOS transistor logic level FET
- PHB11N06LT
- 55 V, N-channel trenchMOS transistor logic level FET
- PHB11N06LT
- TrenchMOS transistor. Logic level FET.
PHB112N06T Datenblatt und Spezifikationen
Hersteller : Philips
Verpacken : SOT
Pins : 3
Temperatur : Min -55 °C | Max 175 °C
Größe : 288 KB
Application : 55 V, N-channel enhancement mode field-effect transistor
PHB112N06T PDF-Download