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PHB2N60E spec: 600 V, power MOS transistor avalanche energy rated
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PHB2N60E Datenblatt und Spezifikationen
Hersteller : Philips
Verpacken : SOT
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 83 KB
Application : 600 V, power MOS transistor avalanche energy rated
PHB2N60E PDF-Download