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PHB8ND50E spec: 500 V, power MOS transistor FREDFET, avalanche energy rated
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PHB8ND50E Datenblatt und Spezifikationen
Hersteller : Philips
Verpacken : SOT
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 80 KB
Application : 500 V, power MOS transistor FREDFET, avalanche energy rated
PHB8ND50E PDF-Download