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PHD2N60E spec: PowerMOS transistor. Avalanche energy rated.
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PHD2N60E Datenblatt und Spezifikationen
Hersteller : Philips
Verpacken : SOT428
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 103 KB
Application : PowerMOS transistor. Avalanche energy rated.
PHD2N60E PDF-Download