Path:OKDatasheet > Halbleiter Datenblatt > Philips Datenblatt > PHX2N50E
PHX2N50E spec: PowerMOS transistor. Avalanche energy rated.
Ähnliche PHX2N50E
- PHX23NQ10T
- 100 V, N-channel trenchMOS transistor
- PHX2N40E
- 400 V, power MOS transistor isolated version of PHP4N40E
- PHX2N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX2N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX2N50E
- 500 V, power MOS transistor avalanche energy rated
- PHX2N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX2N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX2N60E
- PowerMOS transistor. Avalanche energy rated.
PHX2N50E Datenblatt und Spezifikationen
Hersteller : Philips
Verpacken : SOT186A
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 85 KB
Application : PowerMOS transistor. Avalanche energy rated.
PHX2N50E PDF-Download