Path:OKDatasheet > Halbleiter Datenblatt > Philips Datenblatt > PHX3N40E
PHX3N40E spec: 400 V, power MOS transistor avalanche energy rated
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PHX3N40E Datenblatt und Spezifikationen
Hersteller : Philips
Verpacken : SOT
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 70 KB
Application : 400 V, power MOS transistor avalanche energy rated
PHX3N40E PDF-Download