F1001 spec: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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F1001 Datenblatt und Spezifikationen

Hersteller : Polyfet RF

Verpacken :

Pins : 4

Temperatur : Min -65 °C | Max 150 °C

Größe : 40 KB

Application : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor