Path:OKDatasheet > Halbleiter Datenblatt > Polyfet RF Datenblatt > F1021
F1021 spec: 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Ähnliche F1021
- F1020
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
- F1021
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
- F1022
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
- F1027
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1021 Datenblatt und Spezifikationen
Hersteller : Polyfet RF
Verpacken :
Pins : 4
Temperatur : Min -65 °C | Max 150 °C
Größe : 41 KB
Application : 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1021 PDF-Download