F1070 spec: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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F1070 Datenblatt und Spezifikationen

Hersteller : Polyfet RF

Verpacken :

Pins : 4

Temperatur : Min -65 °C | Max 150 °C

Größe : 41 KB

Application : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor