Ähnliche F2004

  • F2001
    • 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2002
    • 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2004
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2004 Datenblatt und Spezifikationen

Hersteller : Polyfet RF 

Verpacken :  

Pins : 4 

Temperatur : Min -65 °C | Max 150 °C

Größe : 40 KB

Application : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2004 PDF-Download