Ähnliche 2SA1252

  • 2SA1011
    • PNP epitaxial planar silicon transistor, high-voltag switching, AF power amp, 100W output predriver application
  • 2SA1016
    • PNP epitaxial planar silicon transistor, high voltag, low-noise amp application
  • 2SA1016K
    • PNP epitaxial planar silicon transistor, high voltag, low-noise amp application
  • 2SA1177
    • PNP epitaxial planar silicon transistor, HF amp application
  • 2SA1207
    • PNP epitaxial planar silicon transistor, high-voltage switching, AF 60W predriver application
  • 2SA1208
    • PNP epitaxial planar silicon transistor, high-voltage switching, audio 80W output predriver application
  • 2SA1209
    • PNP epitaxial planar silicon transistor, 160V/140mA high-voltage switching and AF 100W predriver application
  • 2SA1209
    • PNP transistors 160V/140mA high-voltage switching and AF 100W predriver applications

2SA1252 Datenblatt und Spezifikationen

Hersteller : SANYO 

Verpacken : 2018A 

Pins : 3 

Temperatur : Min 0 °C | Max 0 °C

Größe : 116 KB

Application : PNP epitaxial planar silicon transistor, for AF application 

2SA1252 PDF-Download