2SA1963 spec: PNP epitaxial planar silicon transistor, high-frequency low-noise amp, ultrahigh-speed switching application

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2SA1963 Datenblatt und Spezifikationen

Hersteller : SANYO

Verpacken : 2018B

Pins : 3

Temperatur : Min 0 °C | Max 0 °C

Größe : 141 KB

Application : PNP epitaxial planar silicon transistor, high-frequency low-noise amp, ultrahigh-speed switching application