Path:OKDatasheet > Halbleiter Datenblatt > SANYO Datenblatt > 2SJ285
2SJ285 spec: P-channel MOS silicon FET, very high-speed switching application
Ähnliche 2SJ285
- 2SJ225
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ225
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ226
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ228
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ229
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ230
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ231
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ232
- P-channel MOS silicon FET, very high-speed switching application
2SJ285 Datenblatt und Spezifikationen
Hersteller : SANYO
Verpacken : 2091
Pins : 3
Temperatur : Min 0 °C | Max 0 °C
Größe : 79 KB
Application : P-channel MOS silicon FET, very high-speed switching application
2SJ285 PDF-Download